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NPN SILICON RF TRANSISTO


主要特性
高增益:︱S21e︱2 典型值为12dB @ VCE=6V，IC=30mA，f=1GHz
低噪声: NF典型值为1.5dB @ VCE=6V，IC=5mA，f=1GHz
增益带宽乘积: fT典型值为8GHz @ VCE=6V，IC=30mA，f=1GHz


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